Samsung Electronics and Advanced Micro Devices (AMD) have inked a memorandum of understanding (MoU) to enhance their strategic partnership in next-generation AI memory and computing technologies. The collaboration will focus on the provision of Samsung’s cutting-edge high-bandwidth memory, referred to as HBM4, for AMD’s upcoming Instinct MI455X AI accelerators. Additionally, the deal includes the supply of optimized DDR5 memory for AMD’s sixth-generation EPYC processors as per a shared announcement.
Both companies have expressed intentions to explore potential collaboration in semiconductor manufacturing, with Samsung’s foundry business being considered as a potential partner for the production of forthcoming AMD chips. This agreement further solidifies the existing ties between the two entities, with Samsung already supplying HBM3E memory utilized in AMD’s MI350X and MI355X accelerators. Under this new arrangement, Samsung is poised to take on a more significant role as a provider of advanced memory solutions for AMD’s upcoming AI hardware.
In a recent development, AMD disclosed a substantial agreement valued at up to $60 billion over a 5-year period with Meta Platforms, the parent company of Facebook. Concurrently, Samsung is actively fortifying its presence in the high-bandwidth memory sector, where it contends with robust competition from SK Hynix. Market data from Counterpoint reveals that Samsung currently commands a share of approximately 22% in the global HBM market, while SK Hynix leads with a share of around 57%.
